Oscenix develops solid-state technologies for compact, power-constrained platforms—advancing fundamental capabilities
that enable the next generation of devices.
核心技术
Our technical foundation combines licensed IP and deep expertise in piezoelectric MEMS. We focus on device-level innovation that improves real system outcomes—efficiency, miniaturization, and integration—without relying on fragile workarounds.
IP 隔音罩
A patented acoustic shield element integrated into the device design maintains an air seal and prevents unwanted airflow through gaps—enabling materially higher acoustic intensity.
- Sound performance enhancement through improved sealing and airflow control
- System-relevant gains with robust manufacturability in compact near-ear form factors
- Does not require ultrasound modulation to deliver meaningful performance improvement
多层 AlScN 平台
AlScN (Aluminum Scandium Nitride) is a high-performance piezoelectric material for next-generation MEMS. Compared to AlN, it delivers significantly higher actuation efficiency and sensor sensitivity, while enabling ferroelectric and tunable RF applications at higher Sc levels. CMOS-compatible and scalable, AlScN supports compact, efficient microsystems for sensing, actuation, RF, and power applications. Multilayer AlScN stacks with alternating polarization increase induced force with layer count, enabling scalable improvements in displacement and electromechanical performance.
- 交替偏振多层叠片提高致动效率
- High-Sc AlScN processes to improve piezoelectric coefficients
- Process IP designed for scalability across future generations of devices